Description

ABB 5SHY3545L0010 Insulated gate bipolar transistor Module

Electrical parameters
Collector and emitter voltage (Vce) : Typically 1700V, this indicates the maximum voltage that the IGBT module can withstand between the collector and emitter. In practical applications, the applied voltage should be lower than this value to ensure the safe operation of the module.
Collector current (Ic) : It has different values under different conditions. For example, at a shell temperature of 25℃, the continuous collector current can reach 300A. At a shell temperature of 100℃, the continuous collector current is generally 225A. This reflects the current capacity that the module can handle and is one of the important parameters when choosing an IGBT module. It determines the size of the load that the module can drive.
Peak collector current (Icm) : It can reach 600A, which is the maximum collector current that the module can withstand for a short period of time. It usually occurs at the moment of circuit switching or in the event of a fault.
Gate-emitter voltage (Vge) : Typically ±20V, which is the voltage range of the gate relative to the emitter. Exceeding this range may damage the gate of the IGBT.

Switching characteristic parameters
Turn-on time (ton) : Generally at the level of a few microseconds, for instance, a typical value might be around 1.5μs. This refers to the time required from the application of the turn-on signal to the full conduction of the IGBT.
Turn-off time (toff) : It is also at the level of a few microseconds, for instance, a typical value is around 3μs. It refers to the time from the application of the turn-off signal to the complete cut-off of the IGBT. The length of the switching time affects the performance of IGBTs in high-frequency applications. A shorter switching time can enable IGBTs to have higher efficiency and lower switching loss in the high-frequency switching state.
Loss parameter
On-state loss (Pon) : In the conducting state, due to the collector current passing through the IGBT, a certain power loss will occur, which is related to factors such as the collector current and the conduction voltage. For instance, under specific current and voltage conditions, the on-state loss may range from a few watts to tens of watts.
Switching loss (Psw) : During the switching process, due to the charging and discharging of the junction capacitance of the IGBT and the changes in current and voltage, switching loss occurs. The higher the switching frequency is, the greater the switching loss will be. For the 5SHY3545L0010, its switching loss varies under different switching frequencies and load conditions, generally ranging from tens of watts to hundreds of watts.